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STM8L051F3 데이터시트(PDF) 49 Page - STMicroelectronics

부품명 STM8L051F3
상세설명  8-bit ultra-low-power MCU, 8-Kbyte Flash memory, 256-byte data EEPROM, RTC, timers, USART, I2C, SPI, ADC
PDF  96 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM8L051F3 데이터시트(HTML) 49 Page - STMicroelectronics

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DS9178 Rev 4
49/96
STM8L051F3
Electrical parameters
87
8.3.2
Embedded reset and power control block characteristics
The reset and power block parameters are described in Table 16 and are derived from tests
performed under the ambient temperature conditions summarized in Table 15: General
operating conditions.
Table 16. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tVDD
VDD rise time rate
BOR detector
enabled
0(1)
-
∞(1)
µs/V
VDD fall time rate
BOR detector
enabled
20(1)
-
∞(1)
tTEMP
Reset release delay
VDD rising
-3-
ms
VPDR
Power-down reset threshold
Falling edge
1.30(2)
1.50
1.65
V
VBOR0
Brown-out reset threshold 0
(BOR_TH[2:0]=000)
Falling edge
1.67
1.70
1.74
V
Rising edge
1.69
1.75
1.80
VBOR1
Brown-out reset threshold 1
(BOR_TH[2:0]=001)
Falling edge
1.87
1.93
1.97
Rising edge
1.96
2.04
2.07
VBOR2
Brown-out reset threshold 2
(BOR_TH[2:0]=010)
Falling edge
2.22
2.3
2.35
Rising edge
2.31
2.41
2.44
VBOR3
Brown-out reset threshold 3
(BOR_TH[2:0]=011)
Falling edge
2.45
2.55
2.60
Rising edge
2.54
2.66
2.7
VBOR4
Brown-out reset threshold 4
(BOR_TH[2:0]=100)
Falling edge
2.68
2.80
2.85
Rising edge
2.78
2.90
2.95
VPVD0
PVD threshold 0
Falling edge
1.80
1.84
1.88
V
Rising edge
1.88
1.94
1.99
VPVD1
PVD threshold 1
Falling edge
1.98
2.04
2.09
Rising edge
2.08
2.14
2.18
VPVD2
PVD threshold 2
Falling edge
2.2
2.24
2.28
Rising edge
2.28
2.34
2.38
VPVD3
PVD threshold 3
Falling edge
2.39
2.44
2.48
Rising edge
2.47
2.54
2.58
VPVD4
PVD threshold 4
Falling edge
2.57
2.64
2.69
Rising edge
2.68
2.74
2.79
VPVD5
PVD threshold 5
Falling edge
2.77
2.83
2.88
Rising edge
2.87
2.94
2.99
VPVD6
PVD threshold 6
Falling edge
2.97
3.05
3.09
Rising edge
3.08
3.15
3.20
1. Guaranteed by design.
2. Guaranteed by characterization results.



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