SPC58NH84C3 datasheet(77/147 Pages) STMICROELECTRONICS

77 / 147 page

DS12304 Rev 5

77/147

SPC58EHx, SPC58NHx

Electrical characteristics

t16keraseeep

Erase 16 KB Data Flash -

EEPROM (partition 3)

225

645

715

520

4700

C ms

ttr

Program rate(8)

1.7

2.8

3.40

2.4

—

s/M

tpr

Erase rate(8)

4.8

7.2

9.6

6.4

—

s/M

ttprfm

Program rate Factory Mode(8)

1.12

1.4

1.6

—

s/M

terfm

Erase rate Factory Mode(8)

4.0

5.2

5.8

—

s/M

tffprogram

Full flash programming time(9) 19.8

29.3

36.3

25.4

—

tfferase

Full flash erasing time(9)

41.2

66.0

82.4

66.0

—

tESRT

Erase suspend request

rate(10)

200

—

— µs

tPSRT

Program suspend request

rate(10)

—

— µs

tAMRT

Array Integrity Check - Margin

Read suspend request rate

—

— µs

tPSUS

Program suspend latency(11)

——

—

µs

tESUS

Erase suspend latency(11)

——

—

µs

tAIC0S

Array Integrity Check (10.0

MB, sequential)(12)

—

— ms

tAIC256KS

Array Integrity Check (256

KB, sequential)(12)

1.5

—

— ms

tAIC0P

Array Integrity Check (10.0

MB, proprietary)(12)

4.0

—

tMR0S

Margin Read (10.0 MB,

sequential)(12)

200

—

— ms

tMR256KS

Margin Read (256 KB,

sequential)(12)

4.0

—

— ms

1. Characteristics are valid both for Data Flash and Code Flash, unless specified in the characteristics column.

2. Actual hardware operation times; this does not include software overhead.

3. Typical program and erase times assume nominal supply values and operation at 25 °C.

4. Typical End of Life program and erase times represent the median performance and assume nominal supply values.

Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but

not tested.

Table 38. Flash memory program and erase specifications (continued)

Symbol

Characteristics(1)(2)

Value

Unit

Typ(3) C

Initial max

Typical

end of

life(4)

Lifetime

max(5)

25 °C

(6)

All

temp

(7)

< 1 K

cycles

< 250 K

cycles

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