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AT24C01C 데이터시트(PDF) 12 Page - Microchip Technology

부품명 AT24C01C
상세설명  I²C-Compatible (Two-Wire) Serial EEPROM 1‑Kbit (128 x 8), 2‑Kbit (256 x 8)
PDF  45 Pages
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제조업체  MICROCHIP [Microchip Technology]
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AT24C01C 데이터시트(HTML) 12 Page - Microchip Technology

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4.5.1.1
Device Reset
To prevent inadvertent write operations or any other spurious events from occurring during a power-up
sequence, the AT24C01C/AT24C02C includes a Power-on Reset (POR) circuit. Upon power-up, the
device will not respond to any commands until the VCC level crosses the internal voltage threshold (VPOR)
that brings the device out of Reset and into Standby mode.
The system designer must ensure the instructions are not sent to the device until the VCC supply has
reached a stable value greater than or equal to the minimum VCC level. Additionally, once the VCC is
greater than or equal to the minimum VCC level, the bus master must wait at least tPUP before sending the
first command to the device. See Table 4-4 for the values associated with these power-up parameters.
Table 4-4. Power-up Conditions(1)
Symbol
Parameter
Min. Max. Units
tPUP
Time required after VCC is stable before the device can accept commands 100
µs
VPOR
Power-on Reset Threshold Voltage
1.5
V
tPOFF
Minimum time at VCC = 0V between power cycles
500
ms
Note: 
1.
These parameters are characterized but they are not 100% tested in production.
If an event occurs in the system where the VCC level supplied to the AT24C01C/AT24C02C drops below
the maximum VPOR level specified, it is recommended that a full power cycle sequence be performed by
first driving the VCC pin to GND, waiting at least the minimum tPOFF time and then performing a new
power-up sequence in compliance with the requirements defined in this section.
4.5.2
Pin Capacitance
Table 4-5. Pin Capacitance(1)
Symbol
Test Condition
Max.
Units
Conditions
CI/O
Input/Output Capacitance (SDA)
8
pF
VI/O = 0V
CIN
Input Capacitance (A0, A1, A2 and SCL)
6
pF
VIN = 0V
Note: 
1.
This parameter is characterized but is not 100% tested in production.
4.5.3
EEPROM Cell Performance Characteristics
Table 4-6. EEPROM Cell Performance Characteristics
Operation
Test Condition
Min.
Max.
Units
Write Endurance(1)
TA = 25°C, VCC = 3.3V,
Page Write mode
1,000,000
Write Cycles
Data Retention(1)
TA = 55°C
100
Years
Note: 
1.
Performance is determined through characterization and the qualification process.
AT24C01C/AT24C02C
Electrical Characteristics
© 2018 Microchip Technology Inc.
Datasheet
DS20006111A-page 12



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