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FLL400IP-2 데이터시트(PDF) 1 Page - Eudyna Devices Inc

부품명 FLL400IP-2
상세설명  L-Band Medium & High Power GaAs FET
PDF  4 Pages
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제조업체  EUDYNA [Eudyna Devices Inc]
홈페이지  http://www.sei-device.com/index.asp
Logo EUDYNA - Eudyna Devices Inc

FLL400IP-2 데이터시트(HTML) 1 Page - Eudyna Devices Inc

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Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power-Added Efficiency
Thermal Resistance
Symbol
IDSS
VGSO
-
6000
-
-12
16
-1.0
-2.0
-3.5
-5
-
-
44.5
45.5
-
9.0
10.0
-
-
44
-
-
1.0
1.4
VDS = 5V, VGS=0V
VDS = 5V, IDS=7.2A
VDS = 5V, IDS=720mA
IGS = -720µA
Channel to Case
VDS = 12V
f=1.96GHz
IDS = 2A
VDS = 10V
f=1.96GHz
IDS = 2A
A
mS
V
dB
dBm
V
°C/W
%
gm
Vp
P1dB
G1dB
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
-
44.5
-
-
10.0
-
dB
dBm
P1dB
G1dB
ηadd
Drain Current
-
6.0
8.0
A
IDSR
Rth
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°C)
G.C.P.: Gain Compression Point
CASE STYLE: IP
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
Tc = 25
°C
V
V
W
°C
°C
VGS
PT
Tstg
Tch
Condition
107
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25
Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
1
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• PCS/PCN Communication Systems.
Edition 1.6
December 1999
FLL400IP-2
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
FEATURES
• Push-Pull Configuration
• High Power Output: 35W (Typ.)
• High PAE: 44% (Typ.)
• Broad Frequency Range: 800 to 2000 MHz.
• Suitable for class A operation at 10V
and class AB operation at 12V


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