| 전자부품 데이터시트 검색엔진 |
|
STGP8M120DF3 데이터시트(PDF) 7 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STGP8M120DF3 데이터시트(HTML) 7 Page - STMicroelectronics |
|
7 / 15 page ![]() Figure 13. Capacitance variations IGBT140920161253CVR 100 10 1 0.1 1 10 100 1000 C (pF) VCE (V) Cies Coes Cres Figure 14. Gate charge vs gate-emitter voltage IGBT140920161253GCGE 15 10 5 0 0 10 20 30 VGE (V) Qg (nC) VCC = 960 V, IC = 8 A, IG = 1 mA Figure 15. Switching energy vs collector current IGBT140920161254SLC 1800 1200 600 0 0 4 8 12 E (µJ) IC (A) VCC = 600 V, RG = 33 Ω, VGE = 15 V, TJ = 175 °C Etot Eoff Eon Figure 16. Switching energy vs gate resistance IGBT140920161255SLG 1600 1200 800 400 0 40 80 120 E (µJ) RG (Ω) VCC = 600 V, IC = 8 A, VGE = 15 V, TJ = 175 °C Etot Eoff Eon Figure 17. Switching energy vs temperature IGBT140920161255SLT 1100 900 700 500 300 0 50 100 150 E (µJ) TJ (°C) VCC = 600 V, IC = 8 A, RG = 33 Ω, VGE = 15 V Etot Eoff Eon Figure 18. Switching energy vs collector emitter voltage IGBT140920161256SLV 2000 1500 1000 500 0 200 400 600 800 E (µJ) VCE (V) IC = 8 A, RG = 33 Ω, VGE = 15 V, TJ = 175 °C Etot Eoff Eon STGP8M120DF3 Electrical characteristics (curves) DS11847 - Rev 2 page 7/15 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |