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STGP8M120DF3 데이터시트(PDF) 1 Page - STMicroelectronics |
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STGP8M120DF3 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() 1 2 3 TO-220 TAB C(2, TAB) E(3) NG1E3C2T G(1) Features • 10 µs of minimum short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 8 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast recovery antiparallel diode • Maximum junction temperature: TJ = 175 °C Applications • Industrial drives • UPS • Solar • Welding • General-purpose inverters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Product status link STGP8M120DF3 Product summary Order code STGP8M120DF3 Marking G8M120DF3 Package TO-220 Packing Tube Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package STGP8M120DF3 Datasheet DS11847 - Rev 2 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
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