STGP8M120DF3 datasheet(2/15 Pages) STMICROELECTRONICS

부품명	STGP8M120DF3

상세설명	Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

PDF	15 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

1200

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current

PTOT

Total dissipation at TC = 25 °C

167

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

1. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.9

°C/W

Thermal resistance junction-case diode

1.47

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

STGP8M120DF3

Electrical ratings

DS11847 - Rev 2

page 2/15

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