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SPC584G80 데이터시트(PDF) 19 Page - STMicroelectronics |
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SPC584G80 데이터시트(HTML) 19 Page - STMicroelectronics |
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19 / 139 page ![]() DS11758 Rev 6 19/139 SPC584Gx, SPC58EGx, SPC58NGx Electrical characteristics 21 4.3 Operating conditions Table 5 describes the operating conditions for the device, and for which all the specifications in the data sheet are valid, except where explicitly noted. The device operating conditions must not be exceeded or the functionality of the device is not guaranteed. Table 5. Operating conditions Symbol C Parameter Conditions Value(1) Unit Min Typ Max FSYS SR P Operating system clock frequency(2) — — — 180 MHz TA_125 Grade(3) SR D Operating Ambient temperature — –40 — 125 °C TJ_125 Grade(3) SR P Junction temperature under bias TA = 125 °C –40 — 150 °C TA_105 Grade(3) SR D Ambient temperature under bias — –40 — 105 °C TJ_105 Grade(3) SR D Operating Junction temperature TA = 105 °C –40 — 130 °C VDD_LV SR P Core supply voltage(4) —1.14(5) 1.20 1.26(6) (7) V VDD_HV_IO_MAIN VDD_HV_IO_FLEX VDD_HV_FLA VDD_HV_OSC SR P IO supply voltage — 3.0 — 5.5 V VDD_HV_ADV SR P ADC supply voltage — 3.0 — 5.5 V VSS_HV_ADV- VSS SR D ADC ground differential voltage — –25 — 25 mV VDD_HV_ADR_S SR P SAR ADC reference voltage — 3.0 — 5.5 V VDD_HV_ADR_S- VDD_HV_ADV SR D SAR ADC reference differential voltage —— — 25 mV VSS_HV_ADR_S SR P SAR ADC ground reference voltage —VSS_HV_ADV V |
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