VS-T..RIA Series

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Vishay Semiconductors

Revision: 27-Jul-2018

5

Document Number: 93756

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Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - On-State Voltage Drop Characteristics

Fig. 8 - Gate Characteristics

500

600

700

800

900

1000

1100

1200

110

100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

T50RIA.. Series

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V

Applied Following Surge.

RRM

J

500

600

700

800

900

1000

1100

1200

1300

0.01

0.1

1

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied

Rated V

Reapplied

RRM

J

T50RIA.. Series

1

10

100

1000

0.5

1

1.5

2

2.5

3

3.5

4

4.5

T = 25°C

J

Instantaneous On-state Voltage (V)

T50RIA.. Series

T = 125°C

J

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

VGD

IGD

(b)

(a)

(1) (2)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

Rectangular gate pulse

(1) PGM = 10W, tp = 5ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 50W, tp = 1ms

(4) PGM = 100W, tp = 500µs

<=30% rated di/dt : 20V, 65ohms

tr=1µs, tp>=6µs

T50RIA.. Series

Frequency Limited by PG(AV)

rated di/dt : 20V, 30ohms;

tr=0.5µs, tp>=6µs

(3) (4)