VS-T..RIA Series

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Vishay Semiconductors

Revision: 27-Jul-2018

2

Document Number: 93756

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Note

(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. T90RIA80S90

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

T50RIA

VALUES

T70RIA

VALUES

T90RIA

UNITS

Maximum average on-state current at

case temperature

IT(AV)

180° conduction, half sine wave

50

70

90

A

70

70

70

°C

Maximum RMS on-state current

IT(RMS)

80

110

141

A

Maximum peak, one-cycle on-state,

non-repetitive surge current

ITSM

t = 10 ms

No voltage

reapplied

Sine half wave,



initial



TJ = TJ maximum

1310

1660

1780

A

t = 8.3 ms

1370

1740

1870

t = 10 ms

100 % VRRM

reapplied

1100

1400

1500

t = 8.3 ms

1150

1460

1570

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

8550

13 860

15 900

A2s

t = 8.3 ms

7800

12 650

14 500

t = 10 ms

100 % VRRM

reapplied

6050

9800

11 250

t = 8.3 ms

5520

8950

10 270

Maximum I2

t for fusing

I2

t

t = 0.1 to 10 ms, no voltage reapplied

85 500

138 500 159 100

A2

s

Low level value of threshold voltage

VT(TO)1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ maximum

0.97

0.77

0.78

V

High level value of threshold voltage

VT(TO)2

(I >

 x I

T(AV)), TJ maximum

1.13

0.88

0.88

Low level value of on-state slope

resistance

rt1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ maximum

4.1

3.6

2.9

m



High level value of on-state slope

resistance

rt2

(I >

 x I

T(AV)), TJ maximum

3.3

3.2

2.6

Maximum on-state voltage drop

VTM

ITM =  x IT(AV), TJ = 25 °C, tp = 400 μs square

Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2

1.60

1.55

1.55

V

Maximum forward voltage drop

VFM

ITM =  x IT(AV), TJ = 25 °C, tp = 400 μs square

Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2

1.60

1.55

1.55

V

Maximum holding current

IH

Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C

200

200

200

mA

Maximum latching current

IL

Anode supply = 6 V, resistive load = 10



Gate pulse: 10 V, 100 μs, TJ = 25 °C

400

400

400

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical turn-on time

tgd

TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A

Ig = 500 mA, tr  0.5, tp  6 μs

0.9

μs

Typical reverse recovery time

trr

TJ = 125 °C, ITM = 50 A, tp = 300 μs, dI/dt = 10 A/μs

3

Typical turn-off time

tq

TJ = TJ maximum, ITM = 50 A, tp = 300 μs, dI/dt = 15 A/μs, 

VR = 100 V, linear to 80 % VDRM

110

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak reverse and off-state

leakage current

IRRM,

IDRM

TJ = TJ maximum

15

mA

RMS isolation voltage

VISOL

50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s

3500

V

Critical rate of rise of



off-state voltage

dV/dt

TJ = TJ maximum, linear to 80 % rated VDRM (1)

500

V/μs