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VS-T..RIA 데이터시트(PDF) 3 Page - Vishay Siliconix

부품명 VS-T..RIA
상세설명  Medium Power Phase Control Thyristors (Power Modules), 50 A, 70 A, 90 A
PDF  12 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VS-T..RIA 데이터시트(HTML) 3 Page - Vishay Siliconix

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VS-T..RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 27-Jul-2018
3
Document Number: 93756
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
T50RIA
VALUES
T70RIA
VALUES
T90RIA
UNIT
S
Maximum peak gate power
PGM
TJ = TJ maximum, tp  5 ms
10
12
12
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz
2.5
3
3
Maximum peak gate current
IGM
TJ = TJ maximum, tp  5 ms
2.5
3
3
A
Maximum peak negative gate voltage
-VGT
10
10
10
V
Maximum required DC gate voltage to
trigger
VGT
TJ = -40 °C
Anode supply = 6 V,
resistive load;
Ra = 1
4.0
4.0
4.0
V
TJ = 25 °C
2.5
2.5
2.5
TJ = TJ maximum
1.5
1.5
1.5
Maximum required DC gate current to
trigger
IGT
TJ = -40 °C
250
270
270
mA
TJ = 25 °C
100
120
120
TJ = TJ maximum
506060
Maximum gate voltage that will not
trigger
VGD
TJ = TJ maximum, rated VDRM applied
0.2
0.2
0.2
V
Maximum gate current that will not
trigger
IGD
5.0
6.0
6.0
mA
Maximum rate of rise of turned-on
current
dI/dt
VD = 0.67 rated VDRM, ITM = 2 x rated dI/dt
Ig = 400 mA for T50RIA and Ig = 500 mA for
T70RIA/T90RIA; tr < 0.5 μs, tp  6 μs
For repetitive value use 40 % non-repetitive
per JEDEC® STD. RS397, 5.2.2.6
200
200
200
A/μs
180
180
180
160
160
160
150
150
150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
T50RIA
VALUES
T70RIA
VALUES
T90RIA
UNITS
Maximum junction operating
temperature range
TJ
-40 to +125
°C
Maximum storage
temperature range
TStg
-40 to +150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.65
0.50
0.38
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.2
Mounting torque, ± 10 %
to heatsink
Non-lubricated
threads
M3.5 mounting screws (1)
1.3 ± 10 %
Nm
terminals
M5 screw terminals
3 ± 10 %
Approximate weight
54
g
Case style
D-55 (T-module)
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
T50RIA
0.08
0.10
0.13
0.19
0.31
0.06
0.10
0.14
0.20
0.32
K/W
T70RIA
0.07
0.08
0.10
0.14
0.24
0.05
0.08
0.11
0.15
0.24
T90RIA
0.05
0.06
0.08
0.12
0.20
0.04
0.06
0.09
0.12
0.20



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