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HC705JB2GRS/H 데이터시트(PDF) 123 Page - NXP Semiconductors

부품명 HC705JB2GRS/H
상세설명  Industry standard M68HC05 CPU core
PDF  128 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
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August 28, 1998
GENERAL RELEASE SPECIFICATION
ELECTRICAL SPECIFICATIONS
REV 1.1
13-5
13.6
CONTROL TIMING
1. The minimum period tILIL or tIHIH should not be less than the number of cycles it takes to execute the interrupt service routine plus
19 tCYC.
2. Effects of processing, temperature, and supply voltage (excluding tolerances of external R and C)
3. tslow is a parameter dependent on fOSC and loading. Typical value of tslow is TENTATIVELY set at 170 ns with minimal value of
130ns and maximal value of 185ns under the SIMULATION conditions that fOSC is 6.0 MHz and slow output transition feature is
enabled. Capacitive loadings of 50pF on PB1-PB2, are assumed. Actual transition time will be specified to replace the TBDs when
enough characterization has been done on various wafers from different lots. The values listed here represent data off simulation
runs under the specified conditions. Under no circumstances should they be treated as the final specification.
13.7
EPROM PROGRAMMING SPECIFICATIONS
Table 13-6. Control Timing
(VDD = 4.2V to 5.5V, VSS = 0 Vdc, TA = 0°C to +70°C, unless otherwise noted)
Characteristic
Symbol
Min
Max
Units
Frequency of Operation
Crystal Oscillator Option
External Clock Source
fOSC
fOSC
DC
6
6
MHz
MHz
Internal Operating Frequency
Crystal Oscillator (fOSC ÷ 2)
External Clock (fOSC ÷ 2)
fOP
fOP
DC
3
3
MHz
MHz
Cycle Time (1/fOP)tCYC
330
ns
RESET Pulse Width Low
tRL
1.5
tCYC
IRQ Interrupt Pulse Width Low (Edge-Triggered)
tILIH
0.5
tCYC
IRQ Interrupt Pulse Period
tILIL
note 1
tCYC
PA0 to PA3, Interrupt Pulse Width High
(Edge-Triggered)
tIHIL
0.5
tCYC
PA0 to PA3, Interrupt Pulse Period
tIHIH
note 1
tCYC
OSC1 Pulse Width
tOH, tOL
——
ns
Output High to Low Transition Period on PB1 (note 3)
tSLOW
——
ns
Table 13-7. EPROM Programming Electrical Characteristics
(VDD = 4.2V to 5.5V, VSS = 0 Vdc, TA = 0°C to +70°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Programming Voltage
IRQ/VPP
VPP
10
12
15
V
Programming Current
IRQ/VPP
IPP
—3—
mA
Programming Time
per byte
tEPGM
14
ms
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com



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