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STM32U595AI 데이터시트(PDF) 185 Page - STMicroelectronics

부품명 STM32U595AI
상세설명  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU,240 DMIPS, up to 4 MB Flash, 2.5 MB SRAM, LTDC, MIPI® DSI
PDF  377 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32U595AI 데이터시트(HTML) 185 Page - STMicroelectronics

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DS13633 Rev 1
185/377
STM32U59xxx
Electrical characteristics
343
5.3.3
Embedded reset and power control block characteristics
The parameters given in the table below are derived from tests performed under the
ambient temperature conditions summarized in Table 32.
Table 34. Embedded reset and power control block characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tRSTTEMPO(2)
Reset temporization after BOR0 is
detected
VDD rising
-
-
900
μs
VBOR0
Brownout reset threshold 0
Rising edge
1.6
1.66
1.71
V
Falling edge, range 1, 2, 3
1.58
1.64
1.69
Falling edge, range 4 and
low-power modes
1.58
1.64
1.69
VBOR1
Brownout reset threshold 1
Rising edge
1.98
2.08
2.17
Falling edge
1.9
2.00
2.1
VBOR2
Brownout reset threshold 2
Rising edge
2.18
2.29
2.39
Falling edge
2.08
2.18
2.25
VBOR3
Brownout reset threshold 3
Rising edge
2.48
2.59
2.7
V
Falling edge
2.39
2.5
2.61
VBOR4
Brownout reset threshold 4
Rising edge
2.76
2.88
3.0
Falling edge
2.67
2.79
2.9
VPVD0
Programmable voltage detector
threshold 0
Rising edge
2.03
2.13
2.23
Falling edge
1.93
2.03
2.12
VPVD1
PVD threshold 1
Rising edge
2.18
2.29
2.39
Falling edge
2.08
2.18
2.28
VPVD2
PVD threshold 2
Rising edge
2.33
2.44
2.55
Falling edge
2.23
2.34
2.44
VPVD3
PVD threshold 3
Rising edge
2.47
2.59
2.7
Falling edge
2.39
2.50
2.61
VPVD4
PVD threshold 4
Rising edge
2.6
2.72
2.83
Falling edge
2.5
2.62
2.73
VPVD5
PVD threshold 5
Rising edge
2.76
2.88
3.0
Falling edge
2.66
2.78
2.9
VPVD6
PVD threshold 6
Rising edge
2.83
2.96
3.08
Falling edge
2.76
2.88
3.0
Vhyst_BOR0
Hysteresis voltage of BOR0
-
-
20
-
mV
Vhyst_BOR_PVD
Hysteresis voltage of BOR
(except BOR0) and PVD
--
80
-
tBOR0 _sampling BOR0 sampling period
ULPMEN = 1
-
30
55
ms



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