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STM32U595AI 데이터시트(PDF) 275 Page - STMicroelectronics

부품명 STM32U595AI
상세설명  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU,240 DMIPS, up to 4 MB Flash, 2.5 MB SRAM, LTDC, MIPI® DSI
PDF  377 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32U595AI 데이터시트(HTML) 275 Page - STMicroelectronics

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DS13633 Rev 1
275/377
STM32U59xxx
Electrical characteristics
343
Figure 37. ADC accuracy characteristics
SINAD
Signal-to-noise and
distortion ratio
Single ended
68
74
-
dB
Differential
73
78
-
SNR
Signal-to-noise ratio
Single ended
68
74
-
Differential
73
78
-
THD
Total harmonic distortion
Single ended
-
-84
-80
Differential
-
-95
-89
1. Evaluated by characterization for BGA packages. Not tested in production. The values for LQFP packages may differ.
2. ADC DC accuracy values are measured after the internal calibration.
3. Extended calibration mode activated.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in SYSCFG_CFGR1 when
VDDA < 2.4 V). The booster is disabled when VDDA ≥ 2.4 V. Resolution = 14 bits, no oversampling.
5. This parameter may degrade in case of digital activity on adjacent I/Os.
Table 96. 14-bit ADC12 accuracy(1)(2)(3) (continued)
Symbol
Parameter
Conditions(4)
Min
Typ
Max
Unit
MSv19880V6
(1) Example of an actual transfer curve
(2) Ideal transfer curve
(3) End-point correlation line
n = ADC resolution
ET = total unadjusted error: maximum deviation
between the actual and ideal transfer curves
EO = offset error: maximum deviation between the first
actual transition and the first ideal one
EG = gain error: deviation between the last ideal
transition and the last actual one
ED = differential linearity error: maximum deviation
between actual steps and the ideal one
EL = integral linearity error: maximum deviation between
any actual transition and the end point correlation line
2
n-1
7
6
5
4
3
2
1
0
Output code
EO
VSSA
2
n-2
2
n-3
VREF+ (VDDA)
ET
EL
ED
1 LSB ideal
EG
(1)
(2)
(3)
(or
)]
[1LSB =
VDDA
2
n
VREF+
2
n



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