STM32U545NET3QTR datasheet(173/283 Pages) STMICROELECTRONICS

173 / 283 page

IDD(BKPSRAM)

Supply current to be

added in Standby mode

when backup SRAM is

retained

1.8

0.15

0.28

0.63

1.25

2.40

0.47

0.84

1.90

3.80

7.20

µA

2.4

0.15

0.24

0.63

1.26

2.50

0.45

0.71

1.90

3.80

7.50

3.0

0.15

0.24

0.64

1.31

2.60

0.47

0.74

2.00

4.00

7.80

3.3

0.14

0.26

0.64

1.30

2.50

0.44

0.78

2.00

3.90

7.50

3.6

0.14

0.29

0.65

1.30

2.50

0.42

0.87

2.00

3.90

7.50

IDD(SRAM2)

Supply current to be

added in Standby mode

when full SRAM2 and

BKPSRAM are retained

LDO

1.8

1.67

4.59

12.79 27.06 55.90

5.10

14.00 39.00 82.00 170.00

2.4

1.68

4.45

12.83 27.23 56.20

5.10

14.00 39.00 82.00 170.00

3.0

1.52

3.82

12.84 27.21 56.10

4.60

12.00 39.00 82.00 170.00

3.3

1.51

3.85

12.81 27.30 56.30

4.60

12.00 39.00 82.00 170.00

3.6

1.87

4.29

12.79 27.10 56.00

5.70

13.00 39.00 82.00 170.00

IDD(SRAM2_8K)

Supply current to be

added in Standby mode

when SRAM2 8-Kbyte

page 1 and BKPSRAM

are retained

1.8

0.57

1.34

4.02

8.36

17.10

1.80

4.10

13.00 26.00

52.00

2.4

0.64

1.35

4.04

8.33

17.20

2.00

4.10

13.00 25.00

52.00

3.0

0.64

1.40

4.04

8.41

17.10

2.00

4.30

13.00 26.00

52.00

3.3

0.66

1.39

3.98

8.40

17.20

2.00

4.20

12.00 26.00

52.00

3.6

0.75

1.41

3.89

8.20

16.70

2.30

4.30

12.00 25.00

51.00

Table 67. Current consumption in Standby mode (continued)

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

-VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

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