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STM32C011D4U6 데이터시트(PDF) 60 Page - STMicroelectronics |
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STM32C011D4U6 데이터시트(HTML) 60 Page - STMicroelectronics |
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60 / 94 page ![]() Electrical characteristics STM32C011x4/x6 60/94 DS13866 Rev 3 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 5.3.11 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/JEDEC standard. Table 45. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Max vs. [fHSI/fCPU] Unit 48 MHz / 48 MHz 48 MHz / 48 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP48 package compliant with IEC 61967-2 0.1 MHz to 30 MHz 3 3 dBµV 30 MHz to 130 MHz 5 -2 130 MHz to 1 GHz 1 -1 1 GHz to 2 GHz 7 8 EMI level 2 2 - Table 46. ESD absolute maximum ratings Symbol Ratings Conditions Package Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-001 All 1C -2000/+1500 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-002 All C2a 500 1. Evaluated by characterization – Not tested in production. |
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