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STM32C011D4U6 데이터시트(PDF) 71 Page - STMicroelectronics |
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STM32C011D4U6 데이터시트(HTML) 71 Page - STMicroelectronics |
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71 / 94 page ![]() DS13866 Rev 3 71/94 STM32C011x4/x6 Electrical characteristics 79 Figure 20. ADC accuracy characteristics Figure 21. Typical connection diagram using the ADC 1. Refer to Table 53: ADC characteristics for the values of RAIN and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (refer to Table 49: I/O static characteristics for the value of the pad capacitance). A high Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced. 3. Refer to Table 49: I/O static characteristics for the values of Ilkg. 4. Refer to Figure 2: Power supply overview. General PCB design guidelines Power supply decoupling should be performed as shown in Figure 9: Power supply scheme. The 100 nF capacitor should be ceramic (good quality) and it should be placed as close as possible to the chip. MSv19880V6 (1) Example of an actual transfer curve (2) Ideal transfer curve (3) End-point correlation line n = ADC resolution ET = total unadjusted error: maximum deviation between the actual and ideal transfer curves EO = offset error: maximum deviation between the first actual transition and the first ideal one EG = gain error: deviation between the last ideal transition and the last actual one ED = differential linearity error: maximum deviation between actual steps and the ideal one EL = integral linearity error: maximum deviation between any actual transition and the end point correlation line 2 n-1 7 6 5 4 3 2 1 0 Output code EO VSSA 2 n-2 2 n-3 VREF+ (VDDA) ET EL ED 1 LSB ideal EG (1) (2) (3) (or )] [1LSB = VDDA 2 n VREF+ 2 n MSv67871V3 Sample-and-hold ADC converter Converter Cparasitic (2) Ilkg (3) CADC VDDA (4) RAIN (1) VAIN RADC VREF+ (4) VSSA I/O analog switch Sampling switch with multiplexing VSS VSS |
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