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ISO808ATR-1 데이터시트(PDF) 13 Page - STMicroelectronics

부품명 ISO808ATR-1
상세설명  Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads
PDF  38 Pages
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Table 12. Insulation characteristics
Symbol
Parameter
Test condition
Value
Unit
PowerSO36 TFQFPN32
In accordance with IEC 60747-17
VPR
Input-to-output test voltage
Method a, type test,
tm = 10 s
partial discharge < 5 pC
1500
1500
VPEAK
Method b, 100% production test,
tm = 1 s
partial discharge < 5 pC
1758
1758
VPEAK
VIOTM
Transient over-voltage
Type test; tini = 60 s
3537
4245
VPEAK
VIOSM
Maximum surge insulation voltage
Type test
3537
4245
VPEAK
RIO
Insulation resistance
Type test
VIO = 500 V, TSTG = 60 s
>109
>109
Ω
UL1577
VISO
Insulation withstand voltage
1 min. type test
2000/2830
2500/3536
VRMS/VPEAK
VISO test Insulation withstand test
1 s 100% production
2500/3537
3000/4245
VRMS/VPEAK
Common Mode Transient Immunity
dVISO/dt CMTI
Type test at VCM = 500 V
±25
±25
V/ns
Table 13. Safety limits
Symbol
Parameter
Test conditions
Value Unit
Input safety, Logic side
TSI
Safety temperature of Logic side
-
150
°C
PSI
Safety power of Logic side(1)
VDD ≤ 6.0 V, VLOGIC(x) ≤ 6.0 V, ILOGIC(x) ≤ 10 mA, TJ ≤ TSI
0.9
W
Output safety, Process side
TSO
Safety temperature of Process side
-
150
°C
PSO
Safety power of Process side(1)
VCC ≤ 36 V, IOUT(x) ≤ 1.5 A, TJ ≤ TSO
5
W
1. Respecting the above limits prevents potential damage to the isolation barrier upon failure on logic or process side circuitry.
The user should apply these values to protect the IC and ensure the safety of the embedded isolation barrier. LOGIC(x)
stands for any pin on the logic side; OUT(x) stands for any of the 8 output pins on the process side.
ISO808A, ISO808A-1
Electrical characteristics
DS14170 - Rev 1
page 13/38



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