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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ZAMC4100 데이터시트(PDF) 65 Page - Renesas Technology Corp |
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ZAMC4100 데이터시트(HTML) 65 Page - Renesas Technology Corp |
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65 / 156 page  ZAMC4100 Datasheet © 2016 Integrated Device Technology, Inc. 65 January 26, 2016 HBxCSHEN 1) HBxCSLEN 1) HByLEN 1) HBxOSF 1) Description 2) 0 1 1 0 1 0 0 0 Invalid. 0 1 0 1 1) In the case of a load connected between two half-bridges (full-bridge configuration), “x” corresponds to one of the half-bridges (x = 1 to 4) and “y” corresponds to the other half-bridge (y = 1 to 4). In the case of a load connected between the output of the driver and one of the supply rails, the column “HByLEN” is not applicable. See Table 3.13 for more information about the HByLEN bits. 2) Important: The result of the diagnostic procedure is correct only if the drivers involved are switched-off during the diagnostic procedure and are turned on only when explicitly required according to this table. 3) The diagnostic procedure for full-bridge configuration includes enabling one of the low-side drivers, which makes a complete diagnostic of the load possible. 3.9. High-Side Drivers Within the SBC, there are 4 high-side drivers for HS1 to HS4. Figure 3.14 shows the block diagram for the each driver. It is essentially the same as the half-bridge but without the low-side MOSFET. Figure 3.14 Structure of High-Side Drivers VDDE Driver H Charge Pump HSxEN HSx pin VSS HSxCSEN OCH Detect HSxOCIF Limit 20µs Counter Integrator Open/Short Detect HSxOSF CS RLOAD VSS OVT Reset HSx PWMEN From PWM Block CPVEIF OVIF UVIF OVTIF Features of High-Side Drivers: • Separate enable bit for each driver. • Separate PWM enable bit for each driver. • Each NMOS has over-current detection and protection circuitry. The over-current event automatically disables the driver. • If an over-voltage or under-voltage condition is detected at VDDE pin the drivers are automatically disabled. • Each driver has diagnostic circuitry for detecting an open or short in the output load. |
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