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S71GS256 데이터시트(PDF) 13 Page - SPANSION

부품명 S71GS256
상세설명  128N based MCPs
PDF  195 Pages
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December 17, 2004 S71GS256/128N_00_A0
13
Ad vance
Info rmat i o n
Ordering Information
The order number (Valid Combination) is formed by the following:
S71GS
256
N
C0
BA
W
AK
0
PACKING TYPE
0= Tray
2
= 7” Tape and Reel
3= 13” Tape and Reel
PACKAGE MODIFIER / MODEL NUMBER
See Valid Combinations table
TEMPERATURE RANGE
W
= Wireless (-25
°C to +85°C)
PACKAGE TYPE
BA
= Very Thin Fine-pitch BGA Lead (Pb)-free compliant package
BF
= Very Thin Fine-pitch BGA Lead (Pb)-free package
pSRAM DENSITY
C0
= 64 Mb pSRAM
B0
= 32 Mb pSRAM
PROCESS TECHNOLOGY
N
= 110 nm, MirrorBitTM Technology
FLASH DENSITY
256
= 256 Mb
128
= 128 Mb
PRODUCT FAMILY
S71GS Multi-chip Product (MCP)
3.0 Volt-only VCC and 1.8 V VIOUniform Sector Page Mode Flash Memory
with 1.8 Volt pSRAM
S71GS256NC0 Valid Combinations
Flash
Initial/Page
Speed (ns)
Address
Sector
Protection
(p)SRAM
Supplier
(p)SRAM
Type/
Access
Time (ns)
Package
Type
Package
Marking
Base
Ordering
Part Number
Package &
Temperature
Package
Modifier/
Model
Number
Packing
Type
S71GS256NC0
BAW
AK
0, 2, 3
(Note 1)
110/30
Lowest Add
CellRam
2A
(Note 3)
70 / 25
8mmx11.6mm
84-ball Lead
(Pb)-free
Compliant
(Note 2)
AP
Highest Add
S71GS256NC0
BFW
AK
Lowest Add
8mmx11.6mm
84-ball Lead
(Pb)-free
AP
Highest Add
Notes:
1. Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading “S” and packing type
designator from ordering part number.
3. For specifications, refer to the CellularRam 2A module.
Valid Combinations
Valid Combinations list configurations planned to be supported in vol-
ume for this device. Consult your local sales office to confirm avail-
ability of specific valid combinations and to check on newly released
combinations.



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