1997 Jun 20

5

Philips Semiconductors

Product specification

N-channel enhancement mode

vertical D-MOS transistor

BST80

Fig.6 Output characteristics; typical values.

handbook, halfpage

0

(2)

(3)

(4)

(5)

1.2

0.8

0.4

0

VDS (V)

ID

(A)

210

46

8

MDA173

(1)

Fig.7 Transfer characteristic; typical values.

handbook, halfpage

0

1.2

0.8

0.4

0

VGS (V)

ID

(A)

210

46

8

MDA172

Fig.8 Drain current as a function of drain-source

on-state resistance; typical values.

handbook, halfpage

10

0

ID

(mA)

RDSon (Ω)

2468

10

MDA171

(1)

(2)

(3)

(4)

Fig.9

Temperature coefficient of gate-source

threshold voltage; typical values.

k

V

V

--------------------------------------

=

handbook, halfpage

−50

0

50

150

1.2

0.7

k

1.1

100

1

0.9

0.8

MDA175

Tj (