| 전자부품 데이터시트 검색엔진 |
|
BST80 데이터시트(PDF) 6 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BST80 데이터시트(HTML) 6 Page - NXP Semiconductors |
|
6 / 12 page ![]() 1997 Jun 20 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BST80 Fig.10 Temperature coefficient of drain-source on-state resistance; typical values. ID = 500 mA; VGS =10V. k R DSon at Tj R DSon at 25 ° C ----------------------------------------- = handbook, halfpage −50 0 50 150 3 0.5 k 2.5 100 2 1.5 1 MDA174 Tj ( oC) |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |