1997 Jun 20

2

Philips Semiconductors

Product specification

N-channel enhancement mode

vertical D-MOS transistor

BST80

FEATURES

• Low drain-source on-state resistance

• Direct interface to C-MOS, TTL, etc.

• High-speed switching

• No secondary breakdown.

APPLICATIONS

• Thin and thick film circuits

• Relay, high-speed and line transformer drivers.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor

in a SOT89 package.

PINNING - SOT89

PIN

SYMBOL

DESCRIPTION

1

s

source

2

d

drain

3

g

gate

Fig.1 Simplified outline and symbol.

handbook, halfpage

12

3

s

d

g

MAM355

Bottom view

Marking code: KM

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

drain-source voltage (DC)

−

80

V

gate-source voltage (DC)

open drain

−±20

V

drain current (DC)

−

500

mA

total power dissipation

−

1W

drain-source on-state resistance

2

3

Ω

forward transfer admittance

300

−

mS