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UPD78P083 데이터시트(PDF) 21 Page - Renesas Technology Corp |
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UPD78P083 데이터시트(HTML) 21 Page - Renesas Technology Corp |
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21 / 58 page ![]() 19 µPD78P083 Pin RESET VPP VDD CE OE PGM D0 to D7 Operating Mode Page data latch L +12.5 V +6.5 V H L H Data input Page write H H L High-impedance Byte write L H L Data input Program verify L L H Data output Program inhibit x H H High-impedance xL L Read +5 V +5 V L L H Data output Output disable L H x High-impedance Standby H x x High-impedance x : L or H 4. PROM PROGRAMMING The µPD78P083 has an internal 24-Kbyte PROM as a program memory. For programming, set the PROM programming mode with the VPP and RESET pins. For the connection of unused pins, refer to “PIN CONFIGURATIONS (TOP VIEW) (2) PROM programming mode.” Caution Programs must be written in addresses 0000H to 5FFFH (The last address 5FFFH must be specified). They cannot be written by a PROM programmer which cannot specify the write address. 4.1 Operating Modes When +5 V or +12.5 V is applied to the VPP pin and a low-level signal is applied to the RESET pin, the PROM programming mode is set. This mode will become the operating mode as shown in Table 4-1 when the CE, OE, and PGM pins are set as shown. Further, when the read mode is set, it is possible to read the contents of the PROM. Table 4-1. Operating Modes of PROM Programming |
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