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M65KA128AL 데이터시트(PDF) 1 Page - STMicroelectronics |
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M65KA128AL 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 53 page ![]() April 2006 Rev 3 1/53 1 M65KA128AL 128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs Feature summary ■ 128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 MWords, each 16 bits wide ■ Supply Voltage –VDD = 1.65V to 1.95V –VDDQ = 1.65 to 1.95V for Input/Output ■ Synchronous Burst Read and Write – Fixed Burst lengths: 1, 2, 4, 8 words or full Page – Burst Types: Sequential and Interleaved. – Maximum clock frequency: 104MHz –CAS Latency 2, 3 ■ Automatic Precharge ■ Low Power features: – PASR (Partial Array Self Refresh), – Automatic TCSR (Temperature Compensated Self Refresh) – Driver Strength (DS) – Deep Power-Down Mode ■ Delivery form: Unsawn Wafer ■ Auto Refresh and Self Refresh ■ LVCMOS Interface Compatible with Multiplexed Addressing ■ Operating temperature – –25°C to +90°C The M65KA128AL is only available as part of a Multi-Chip Package Product. Wafer www.st.com |
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