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M65KA128AL 데이터시트(PDF) 16 Page - STMicroelectronics

부품명 M65KA128AL
상세설명  128Mbit (4 Banks x 2M x 16) 1.8V Supply, Low Power SDRAMs
PDF  53 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M65KA128AL 데이터시트(HTML) 16 Page - STMicroelectronics

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Commands
M65KA128AL
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4.4
Read command
The Read command is used to switch the Low Power SDRAM to Burst Read mode (see
Section 3.2: Burst Read).
During Burst Read operation, the memory reads data from the activated bank. Inputs BA1
and BA0 are used to select a bank, Address inputs A8-A0 are used to select a starting
column location. The value at input A10 determines whether Auto Precharge is activated. If
Auto Precharge is selected, the row being accessed will be precharged at the end of the
Burst Read operation. If Auto Precharge is not selected, the row will remain active for
subsequent accesses. Different Burst Types and Lengths can be programmed using the
Mode Register bits (see Table 4: Mode Register Definition):
●
The Burst Types available are Sequential and Interleaved selected using Mode
Register Bit MR3.
●
Possible Burst Lengths are 1-, 2-, 4-, 8-Word and Full Page, selected using Mode
Register Bits MR0 to MR2.
4.5
Write command
The Write command is used to switch the Low Power SDRAM to Burst Write mode (see
Section 3.3: Burst Write).
During Burst Write operation, the memory writes data to the activated bank. Inputs BA1 and
BA0 inputs are used to select a bank, the A8-A0 Address Inputs are used to select a starting
column location. The value at the A10 input determines whether Auto Precharge is
activated. If Auto Precharge is selected, the row being accessed will be precharged at the
end of the Write burst. If Auto Precharge is not selected, the row will remain active for
subsequent accesses.
Burst Types and Lengths apply to Burst Write operation in the same manner as they do to
Burst Read operations.
4.6
Precharge command
The Precharge command is used to close the open row in a particular bank, or the open
rows in all the banks, depending on the value on the A10 Address Input. If A10 is High, at
VIH, when the Precharge command is issued, the command will be applied to all the banks,
closing all the open rows in these banks. If A10 is Low, at VIL, when the Precharge
command is issued, the command will be applied only to the selected bank, closing the
open row of this bank.
The Precharge command can also be used to terminate a Burst. Issued during a Burst
Read or Burst Write cycle, the Precharge command will interrupt the Burst operation and
close the active bank.
The precharge command can be issued any time after tRAS min. is satisfied. Soon after the
precharge command is issued, the precharge operation performed and the synchronous
DRAM enters the idle state after tRP is satisfied. The tRP parameter is the time required to
perform the precharge. The earliest timing in a read cycle that a precharge command can
be issued without losing any data in the burst is CL-1 clock cycles before the reference clock
that indicates the last data word is valid (see Figure 5)



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