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32G431 데이터시트(PDF) 89 Page - STMicroelectronics |
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32G431 데이터시트(HTML) 89 Page - STMicroelectronics |
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89 / 198 page ![]() IDD (wakeup from Standby) Supply current during wakeup from Standby mode Wakeup clock is HSI16 = 16 MHz(4) 3 V 2.0 - - - - --- - - mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IIDD_ALL(Standby + RTC) + IDD_ALL(SRAM2). 4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 35: Low-power mode wakeup timings. Table 31. Current consumption in Standby mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit - VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C Table 32. Current consumption in Shutdown mode Symbol Parameter Conditions TYP MAX(1) Unit - VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD (Shutdown) Supply current in Shutdown mode (backup registers retained) RTC disabled - 1.8 V 14.0 94.0 570 1600 4350 130 420 2100 6100 17000 nA 2.4 V 22.0 120 670 1900 4950 150 490 2400 6900 19000 3 V 35.0 150 805 2200 5750 180 560 2800 7800 21000 3.6 V 74.0 245 1100 2900 7350 220 710 3300 9100 24000 |
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