| 전자부품 데이터시트 검색엔진 |
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BYM359DX 데이터시트(PDF) 4 Page - NXP Semiconductors |
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BYM359DX 데이터시트(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page ![]() Philips Semiconductors Product specification Dual diode BYM359DX fast, high-voltage Fig.7. Modulator maximum Q s at Tj = 25˚C and 150˚C Fig.8. Modulator maximum t rr measured to 25% of Irrm; T j = 25˚C and 150˚C Fig.9. Modulator typical junction capacitance C d at f = 1 MHz ; Tj = 25˚C Fig.10. Modulator transient thermal impedance Z th = f(tp) 1 100 BY329 -dIF/dt (A/us) Qs / uC 10 1 0.1 10 2 A IF = 10 A 10 A 1 A 1 A 2 A Tj = 150 C Tj = 25 C 1 100 100 10 1 10 1000 BY329 Cd / pF VR / V 1 10 100 BY329 -dIF/dt (A/us) trr / ns 1000 100 10 1 A IF = 10 A Tj = 150 C Tj = 25 C 10A 1A 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BY229F pulse width, tp (s) Transient thermal impedance, Zth j-hs (K/W) D = tp tp T T P t D March 2000 4 Rev 1.000 |
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