Philips Semiconductors

Product specification

Dual diode

BYM359DX

fast, high-voltage

Fig.1. Definition of t

Fig.2. Definition of V

fr

Fig.3. Modulator maximum forward dissipation,

P

parameter D = duty cycle = t

Fig.4. Modulator maximum forward dissipation,

P

a = form factor = I

Fig.5. Modulator maximum non-repetitive rms forward

current. I

T

Fig.6. Modulator typical and maximum forward

characteristic; I

0

2

4

6

8

BY329

IF(AV) / A

PF / W

15

10

5

0

4

2.8

2.2

1.9

a = 1.57

Ths(max) / C

150

78

102

126

Vo = 1.25 V

Rs = 0.03 Ohms

100%

time

dI

dt

F

I

R

I

F

I

rrm

trr

25%

Qs

1ms

10ms

0.1s

1s

10s

tp / s

IFS(RMS) / A

BY229

80

70

60

50

40

30

20

10

0

IFSM

time

time

V F

V

fr

V F

I

F

0

1

BY229F

VF / V

IF / A

30

20

10

0

2

0.5

1.5

max

typ

Tj = 150 C

Tj = 25 C

0

2

4

6

8

10

12

BY329

IF(AV) / A

PF / W

20

15

10

5

0

Ths(max) / C

150

54

78

102

126

0.5

0.2

0.1

D = 1.0

D =

T

T

I

t

Vo = 1.25 V

Rs = 0.03 Ohms

March 2000

3

Rev 1.000