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BYM359DX 데이터시트(PDF) 1 Page - NXP Semiconductors |
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BYM359DX 데이터시트(HTML) 1 Page - NXP Semiconductors |
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1 / 7 page ![]() Philips Semiconductors Product specification Dual diode BYM359DX fast, high-voltage FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop DAMPER MODULATOR • Fast switching • Soft recovery characteristic V R=1500 V V R=800 V • High thermal cycling performance V F ≤ 1.3 V V F ≤ 1.45 V • Isolated mounting tab I F(RMS) =15.7 A I F(RMS) = 11 A I FSM ≤ 60 A I FSM ≤ 60 A t rr ≤ 300 ns t rr ≤ 145 ns GENERAL DESCRIPTION PINNING SOT399 Combined damper and modulator PIN DESCRIPTION diodes in an isolated plastic envelope for horizontal deflection in 1 modulator anode. colour TV and PC monitors. The BYM359DX contains diodes 2 common anode/cathode with performance characteristics designed specifically for 3 damper cathode applications from 16kHz to 56kHz The BYM359DX series is supplied in the conventional leaded SOT399 package. LIMITING VALUES T j = 25 ˚C unless otherwise stated DAMPER MODULATOR SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX UNIT V RSM Peak non-repetitive reverse - 1500 - 800 V voltage. V RRM Peak repetitive reverse voltage - 1500 - 600 V V RWM Crest working reverse voltage - 1300 - 600 V I F(AV) Average forward current sinusoidal;a=1.57 - 10 - 8 A I F(RMS) RMS forward current - 15.7 - 11.0 A I FRM Peak repetitive forward current t=25 µs δ= 0.5 - 20 - 16.0 A T hs ≤ 83 ˚C I FSM Peak non-repetitive forward t = 10ms - 60 - 60 A current t = 8.3 ms - 66 - 66 A sinusoidal; with reapplied V RWM(MAX) T stg Storage temperature -40 150 -40 150 ˚C T J Operating junction temperature - 150 - 150 ˚C 1 3 2 damper modulator case 12 3 March 2000 1 Rev 1.000 |
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