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M750000004 데이터시트(PDF) 121 Page - SPANSION

부품명 M750000004
상세설명  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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January 14, 2004
Am75PDL191CHHa/Am75PDL193CHHa
119
ADV ANCE
I N FO RMAT I O N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
11 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
56
sec
Byte Program Time
5
150
µs
Excludes system level
overhead (Note 5)
Accelerated Byte/Word Program Time
4
120
µs
Word Program Time
7
210
µs
Chip Program Time
(Note 3)
Word Mode
28
84
sec
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years



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