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M750000004 데이터시트(PDF) 123 Page - SPANSION

부품명 M750000004
상세설명  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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January 14, 2004
Am75PDL191CHHa/Am75PDL193CHHa
121
ADV ANCE
I N FO RMAT I O N
PSRAM AC CHARACTERISTICS
Figure 28.
Standby Mode State Machines
Standby Mode Characteristic
AC Characteristics (V
CC= 2.7-3.1 V, TA= -40 to 85°C)
t
WP (min)= 70 ns for continuous write operation over 50 times.
CS2s =V
IL
CS#1s =V
IH
CS #1=V IL, UB or/and LB=VIL
Power On
Initial State
(Wait 200
µs)
Active
Standby
Mode
Deep Power
Down Mode
CS2s =V
IH
CS#1s=V IH and CS2s =VIH
CS2s =V
IL
CS#1s =V
IH
, CS2s =VIH
CS2s =V
IH
Power Mode
Memory Cell Data
Standby Current (
µA)
Wait Time (
µs)
Standby
Valid
80
0
Deep Power Down
Invalid
20
200
Parameter List
Symbol
Speed Bins
Units
70 ns
Min
Max
Read
Read Cycle Time
t
RC
70
-
ns
Address Access Time
t
AA
-70
ns
Chip Select to Output
t
CO
-70
ns
Output Enable to Valid Output
t
OE
-35
ns
UB#, LB# Access Time
t
BA
-70
ns
Chip Select to Low-Z Output
t
LZ
10
-
ns
UB#, LB# Enable to Low-Z Output
t
BLZ
10
-
ns
Output Enable to Low-Z Output
t
OLZ
5-
ns
Chip Disable to High-Z Output
t
HZ
025
ns
UB#, LB# Disable to High-Z Output
t
BHZ
025
ns
Output Disable to High-Z Output
t
OHZ
025
ns
Output Hold from Address Change
t
OH
5-
ns
Write
Write Cycle Time
t
WC
70
-
ns
Chip Select to End of Write
t
CW
60
-
ns
Address Set-up Time
t
AS
0-
ns
Address Valid to End of Write
t
AW
60
-
ns
UB#, LB# Valid to End of Write
t
BW
60
-
ns
Write Pulse Width
t
WP
55
(Note 1)
-ns
Write Recovery Time
t
WR
0-
ns
Write to Output High-Z
t
WHZ
025
ns
Data to Write Time Overlap
t
DW
30
-
ns
Data Hold from Write Time
t
DH
0-
ns
End Write to Output Low-Z
t
OW
5-
ns



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