RF112 datasheet(13/45 Pages) NXP

13 / 45 page

Table 3. Recommended operating conditions (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Notes

VDD_RO2

VDD_TRX2

VDD_160M_IO

1.62

1.67

1.72

Digital supply

voltage

VDD_DIG_CORE

VDD_DIG_IO

0.87

1.71

0.90

1.80

0.97

1.89

Low frequency

Analog supply

ripple

1 kHz ≤ fRipple ≤ 50 MHz

Single tone

mVp

Total ripple

mVrms

High frequency

Analog supply

ripple

4.9 GHz ≤ fRipple ≤ 6.2 GHz

Single tone

2.5

mVpp

Analog supply

noise

1 kHz ≤ fNoise ≤ 30 kHz

1000

2000

nV/ √ Hz

fNoise = 100 kHz

200

400

nV/ √ Hz

fNoise = 1.0 MHz

nV/ √ Hz

fNoise = 10 MHz

nV/ √ Hz

fNoise > 50 MHz

nV/ √ Hz

4.9 GHz ≤ fNoise ≤ 6.2

GHz

nV/ √ Hz

Operating

temperature

range

TA, ambient

temperature

° C

TJ, junction temperature

105

° C

Extended

Operating

temperature

range

TA, ambient

temperature

-40

° C

TJ, junction temperature

105

° C

Reference clock

frequency

Crystal or external clock

source

MHz

Crystal load

capacitance

Effective differential

load capacitance

Implemented

on-chip as

single-ended

capacitors on XI

and XO

External Clock

Source Input

Level

XO CMOS input

0.80

0.99

Vpp

External Clock

Source Duty

Cycle

XO CMOS input

External Clock

Source Phase

Noise

TCXO CMOS input at 40MHz frequency

Offset = 10 kHz

-143

dBc/Hz

Offset = 100 kHz

-155

Offset = 1 MHz and

above

-160

Table continues on the next page...

Electrical characteristics

RF112 Transceiver Data Sheet, Rev. 1 Draft B, 05/2024

NXP Semiconductors

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