STR910FAM32X6 datasheet(56/78 Pages) STMICROELECTRONICS

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Electrical characteristics

STR91xFA

56/78

6.11

Flash memory characteristics

VDDQ = 2.7 - 3.6V, VDD = 1.65 - 2V, TA = -40 / 85 °C unless otherwise specified.

Table 19.

Flash memory program/erase characteristics

Notes: 1 STR91xFAxx4 devices have 512 Kbytes primary Flash, STR91xFAxx2 devices have 256

Kbytes primary Flash

2VDD = 1.8V, VDDQ = 3.3V, TA = 25°C.

3 Flash read access for synchronous addresses is 96 MHz maximum.

4 Flash read access for asynchronous accesses requires 2 wait states when FMI clock is above

66 MHz. See STR91xF Flash Programming Manual for more information.

Table 20.

Flash memory endurance

Parameter

Test Conditions

Value

Unit

Typ2)

Typ after

100K W/E

cycles2)

Max

Bank erase

Primary Bank

(512 Kbytes)1)

11.5

Primary Bank

(256 Kbytes)1)

44.5

Secondary Bank

(32 Kbytes)

700

750

950

Sector erase

Of Primary Bank

(64 Kbytes)

1300

1400

1800

Of Secondary Bank

(8 Kbytes)

300

320

450

Bank program

Primary Bank

(512 Kbytes)1)

3700

4700

5100

Primary Bank

(256 Kbytes)1)

1900

2000

2550

Secondary Bank

(32 Kbytes)

250

260

320

Sector program

Of Primary Bank

(64 Kbytes)

500

520

640

Of Secondary Bank

(8 Kbytes)

Word program

Half word (16 bits)

µs

Parameter

Test Conditions

Value

Unit

Min

Typ

Max

Program/erase cycles

Per word

100K

cycles

Data retention

years

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