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APTGF200U120DG 데이터시트(PDF) 5 Page - Microsemi Corporation

부품명 APTGF200U120DG
상세설명  Single Switch with Series diodes NPT IGBT Power Module
PDF  6 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF200U120DG 데이터시트(HTML) 5 Page - Microsemi Corporation

  APTGF200U120DG Datasheet HTML 1Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 2Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 3Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 4Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 5Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 6Page - Microsemi Corporation  
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APTGF200U120DG
www.microsemi.com
5 – 6
VGE = 15V
25
30
35
40
45
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 1.2Ω
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
VCE = 600V
RG = 1.2Ω
VGE=15V
20
60
100
140
180
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 1.2Ω
TJ = 25°C
TJ = 125°C
20
30
40
50
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 1.2Ω
TJ=125°C,
VGE=15V
0
20
40
60
80
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
VCE = 600V
RG = 1.2Ω
TJ = 125°C
0
8
16
24
32
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
R
G = 1.2Ω
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
40
48
56
02.557.5
10
12.5
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
VCE = 600V
V
GE = 15V
TJ= 125°C
Cies
Cres
Coes
100
1000
10000
100000
0
1020304050
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)



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