APTGF200U120DG datasheet(1/6 Pages) MICROSEMI

부품명	APTGF200U120DG

상세설명	Single Switch with Series diodes NPT IGBT Power Module

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제조업체	MICROSEMI [Microsemi Corporation]

홈페이지	http://www.microsemi.com

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APTGF200U120DG

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Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

VCES

Collector - Emitter Breakdown Voltage

1200

V

Tc = 25°C

275

IC

Continuous Collector Current

Tc = 80°C

200

ICM

Pulsed Collector Current

Tc = 25°C

600

A

VGE

Gate – Emitter Voltage

±20

V

PD

Maximum Power Dissipation

Tc = 25°C

1136

W

RBSOA

Reverse Bias Safe Operating Area

Tj = 150°C

400A @ 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

CK

EK

G

EC

C

CK

E

G

EK

VCES = 1200V

IC = 200A @ Tc = 80°C

Application

•

Zero Current Switching resonant mode

Features

•

Non Punch Through (NPT) FAST IGBT

-

Low voltage drop

-

Low tail current

-

Switching frequency up to 50 kHz

-

Soft recovery parallel diodes

-

Low diode VF

-

Low leakage current

-

Avalanche energy rated

-

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Outstanding performance at high frequency

operation

•

Stable temperature behavior

•

Very rugged

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Easy paralleling due to positive TC of VCEsat

•

Low profile

•

RoHS compliant

Single Switch

with Series diodes

NPT IGBT Power Module

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Advanced Power Technolo...	APTGF200U120D	291Kb / 6P	Single Switch with Series diodes NPT IGBT Power Module

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APTGF200U120DG 데이터시트(PDF) 1 Page - Microsemi Corporation

APTGF200U120DG 데이터시트(HTML) 1 Page - Microsemi Corporation

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