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APTGF200U120DG 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APTGF200U120DG
상세설명  Single Switch with Series diodes NPT IGBT Power Module
PDF  6 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF200U120DG 데이터시트(HTML) 2 Page - Microsemi Corporation

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APTGF200U120DG
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
500
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
750
µA
Tj = 25°C
3.2
3.7
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 200A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 4mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
13.8
Coes
Output Capacitance
1.32
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.88
nF
Qg
Total gate Charge
1320
Qge
Gate – Emitter Charge
140
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 200A
800
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
320
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2Ω
30
ns
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2Ω
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
22
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2Ω
Tj = 125°C
12.2
mJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
Tj = 25°C
750
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
1000
µA
IF
DC Forward Current
Tc = 70°C
240
A
IF = 240A
2
2.5
IF = 480A
2.3
VF
Diode Forward Voltage
IF = 240A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
Tj = 125°C
470
ns
Tj = 25°C
4.8
Qrr
Reverse Recovery Charge
IF = 240A
VR = 800V
di/dt =800A/µs
Tj = 125°C
16
µC



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