| 전자부품 데이터시트 검색엔진 |
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SI3443DVPBF 데이터시트(PDF) 4 Page - InterFET Corporation |
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SI3443DVPBF 데이터시트(HTML) 4 Page - InterFET Corporation |
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4 / 7 page ![]() Si3443DVPbF 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 4 8 12 16 20 24 0 3 6 9 12 15 Q , Total Gate Charge (nC) G I = D -4.5A V =-10V DS 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 0.1 1 10 100 1000 0.1 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C -V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms 1 10 100 0 400 800 1200 1600 -V , Drain-to-Source Voltage (V) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss |
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