Parameter

Max.

Units

Drain- Source Voltage

-20

V

-4.4

-3.5

A

Pulsed Drain Current



-20

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

Single Pulse Avalanche Energy

„

31

mJ

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

08/31/05

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

62.5

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

Si3443DVPbF

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The

TSOP-6

package with its customized leadframe

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

enables a current-handling increase of nearly 300%

compared to the SOT-23.

Description

Top View

1

2

D

G

A

D

D

D

S

3

4

5

6

TSOP-6

PD-95240