STM32F101X6 datasheet(40/64 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F101xx

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Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second. To complete these trials, ESD stress can be applied directly on the device, over the

range of specification values. When unexpected behavior is detected, the software can be

hardened to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device is monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J

1752/3 standard which specifies the test board and the pin loading.

5.3.11

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size is

either 3 parts (cumulative mode) or 3 parts × (n + 1) supply pins (non-cumulative mode).

The human body model (HBM) can be simulated. The tests are compliant with JESD22-

A114A standard.

For more details, refer to the application note AN1181.

Table 26.

EMI characteristics(1)

TBD stands for to be determined.

Symbol Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fHCLK]

Unit

8/36 MHz

SEMI

Peak level

VDD = 3.3 V, TA = 2 5°C,

LQFP100 package compliant

with SAE J 1752/3

0.1 MHz to 30 MHz

TBD

dBµV

30 MHz to 130 MHz

TBD

130 MHz to 1GHz

TBD

SAE EMI Level

TBD

Table 27.

ESD absolute maximum ratings(1)

TBD stands for to be determined.

Symbol

Ratings

Conditions

Maximum value(2)

Values based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge voltage (human

body model)

TA = +25 °C

2000

VESD(CDM)

Electrostatic discharge voltage (charge

device model)

TBD

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