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MCP3021 데이터시트(PDF) 3 Page - Microchip Technology |
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MCP3021 데이터시트(HTML) 3 Page - Microchip Technology |
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3 / 26 page ![]() 2003 Microchip Technology Inc. DS21805A-page 3 MCP3021 TEMPERATURE SPECIFICATIONS Input leakage current ILI -1 — +1 µA VIN = VSS to VDD Output leakage current ILO -1 — +1 µA VOUT = VSS to VDD Pin capacitance (all inputs/outputs) CIN, COUT —— 10 pF TAMB = 25°C, f = 1 MHz; (Note 2) Bus Capacitance CB — — 400 pF SDA drive low, 0.4V Power Requirements Operating Voltage VDD 2.7 — 5.5 V Conversion Current IDD —175 250 µA Standby Current IDDS — 0.005 1 µA SDA, SCL = VDD Active bus current IDDA —— 120 µA Note 4 Conversion Rate Conversion Time tCONV —8.96 — µs Note 5 Analog Input Acquisition Time tACQ —1.12 — µs Note 5 Sample Rate fSAMP —— 22.3 ksps fSCL = 400 kHz (Note 1) Electrical Characteristics: All parameters apply across the operating voltage range. Parameters Symbol Min Typ Max Units Conditions Temperature Ranges Extended Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 5L-SOT23A θJA — 256 — °C/W DC ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Unless otherwise noted, all parameters apply at VDD = 5.0V, VSS = GND, RPU = 2 kΩ TA = -40°C to +85°C, I 2C Fast Mode Timing: f SCL = 400 kHz (Note 3). Parameters Sym Min Typ Max Units Conditions Note 1: Sample time is the time between conversions after the address byte has been sent to the converter. Refer to Figure 5-6. 2: This parameter is periodically sampled and not 100% tested. 3: RPU = Pull-up resistor on SDA and SCL. 4: SDA and SCL = VSS to VDD at 400 kHz. 5: tACQ and tCONV are dependent on internal oscillator timing. See Figure 5-5 and Figure 5-6 for relation to SCL. |
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