M25PX32-VMP6F datasheet(55/63 Pages) STMICROELECTRONICS

55 / 63 page

M25PX32

DC and AC parameters

55/63

Figure 30.

Serial input timing

Write Status Register cycle time

1.3

tPP

(8)

Page Program cycle time (256 bytes)

0.8

Page Program cycle time (n bytes)

int(n/8) × 0.025(9)

Program OTP cycle time (64 bytes)

0.2

tSSE

Subsector Erase cycle time

150

tSE

Sector Erase cycle time

tBE

Bulk Erase cycle time

Bulk Erase cycle time (VPP = VPPH)17

Preliminary data.

Typical values given for TA = 25° C.

tCH + tCL must be greater than or equal to 1/ fC

Value guaranteed by characterization, not 100% tested in production.

Expressed as a slew-rate.

Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.

VPPH should be kept at a valid level until the program or erase operation has completed and its result

(success or failure) is known.

When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1

≤ n ≤

256)

int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.

Table 17.

AC characteristics(1) (continued)

Test conditions specified in Table 13 and Table 14

Symbol

Alt.

Parameter

Min.

Typ.(2)

Max.

Unit

DQ0

AI13728

MSB IN

DQ1

tDVCH

High Impedance

LSB IN

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSH

tCHSL

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