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M69KB128AA85CW8 데이터시트(PDF) 28 Page - STMicroelectronics

부품명 M69KB128AA85CW8
상세설명  128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
PDF  68 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M69KB128AA85CW8 데이터시트(HTML) 28 Page - STMicroelectronics

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7 Configuration registers
M69KB128AA
28/68
Table 8.
Register Selection
7.2
Programming and Reading the Registers by the software
method
All registers (BCR, RCR, DIDR) can be read by issuing a Read Configuration Register
sequence (see Figure 8: Read Configuration Register (Software Method).
BCR and RCR can be programmed by issuing a Set Configuration Register sequence (see
Figure 7: Set Configuration Register (Software Method).
The timings will be identical to those described in Table 17: Asynchronous Read AC
Characteristics. The Configuration Register Enable input, CR, is ‘don’t care’.
Read Configuration Register and Set Configuration Register sequences both require 4 read or
write cycles. These cycles will be executed in asynchronous mode, whatever the device
operating mode:
1.
2 bus read and one bus write cycles to a unique address location, 7FFFFFh, indicate that
the next operation will read or write to a configuration register. The data written during the
third cycle must be ‘0000h’ to access the RCR, ‘0001h’ to access the BCR and ‘0002h’ to
access the DIDR during the next cycle.
2.
The fourth cycle reads from or writes to the configuration register.
The timings for programming and reading the registers by the software method are identical to
the asynchronous write and read timings.
Register
Read or Write Operation
A18
A19
RCR
Read/Write
0
0
BCR
Read/Write
0
1
DIDR
Read-Only
1
X



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