Internet Data Sheet

Rev. 1.0, 2006-12

13

11032006-VX0M-M6IH

HYS72T512341H[H/J/K]P-[3.7/5]-B

Registered DDR2 SDRAM Modules

3

Electrical Characteristics

3.1

Absolute Maximum Ratings

Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 8 at any time.

TABLE 8

Absolute Maximum Ratings

Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only and functional operation of the device at these or any other

conditions above those indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect reliability.

TABLE 9

DRAM Component Operating Temperature Range

Symbol

Parameter

Rating

Unit

Note

Min.

Max.

V

DD

Voltage on

V

–1.0

+2.3

V

1)

1) When

V

V

DDQ

Voltage on

V

–0.5

+2.3

V

1)2)

V

DDL

Voltage on

V

–0.5

+2.3

V

1)2)

V

Voltage on any pin relative to

V

SS

–0.5

+2.3

V

1)

T

STG

Storage Temperature

–55

+100

°C

1)2)

2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.

Symbol

Parameter

Rating

Unit

Note

Min.

Max.

T

OPER

Operating Temperature

0

90

°C

1)2)3)4)

1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.

2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case

temperature must be maintained between 0 - 90 °C under all other specification parameters.

3) Above 85

4) When operating this product in the 80 °C to 90 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by

setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of

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