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M29W400DT 데이터시트(PDF) 17 Page - STMicroelectronics

부품명 M29W400DT
상세설명  4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
PDF  48 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W400DT 데이터시트(HTML) 17 Page - STMicroelectronics

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M29W400DT, M29W400DB
Bus operations
17/48
3.6
Special bus operations
Additional bus operations can be performed to read the electronic signature and also to
apply and remove block protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.7
Electronic signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 2
and Table 3, Bus operations.
3.8
Block protection and blocks unprotection
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. Block Protect and Chip Unprotect
operations are described in Appendix B: Block protection.
Table 2.
Bus operations, BYTE = VIL
(1)
1.
X = VIL or VIH.
Operation
E
G
W
Address inputs
DQ15A–1, A0-A17
Data inputs/outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL
VIL
VIH
Cell address
Hi-Z
Data output
Bus Write
VIL
VIH
VIL
Command address
Hi-Z
Data input
Output Disable
X
VIH
VIH
X
Hi-Z
Hi-Z
Standby
VIH
X
X
X
Hi-Z
Hi-Z
Read
manufacturer code
VIL
VIL
VIH
A0 = VIL, A1 = VIL,
A9 = VID,
others VIL or VIH
Hi-Z
20h
Read device code
VIL
VIL
VIH
A0 = VIH, A1 = VIL,
A9 = VID,
others VIL or VIH
Hi-Z
EEh
(M29W400DT)
EFh
(M29W400DB)



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