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M29W400DT 데이터시트(PDF) 30 Page - STMicroelectronics

부품명 M29W400DT
상세설명  4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
PDF  48 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W400DT 데이터시트(HTML) 30 Page - STMicroelectronics

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DC and AC parameters
M29W400DT, M29W400DB
30/48
Figure 11.
Read mode AC waveforms
Table 10.
Device capacitance(1)
1.
Sampled only, not 100% tested.
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input capacitance
VIN = 0 V
6
pF
COUT
Output capacitance
VOUT = 0 V
12
pF
Table 11.
DC characteristics
Symbol
Parameter
Test condition
Min
Max
Unit
ILI
Input Leakage current
0 V
≤ V
IN ≤ VCC
±1
µ
A
ILO
Output Leakage current
0 V
≤ V
OUT ≤ VCC
±1
µ
A
ICC1
Supply current (Read)
E =VIL, G =VIH,
f=6MHz
10
mA
ICC2
Supply current (Standby)
E = VCC ±0.2 V,
RP =VCC ±0.2 V
100
µ
A
ICC3
(1)
1.
Sampled only, not 100% tested.
Supply current
(Program/Erase)
Program/Erase
controller active
20
mA
VIL
Input Low voltage
–0.5
0.8
V
VIH
Input High voltage
0.7VCC
VCC +0.3
V
VOL
Output Low voltage
IOL = 1.8 mA
0.45
V
VOH
Output High voltage
IOH =–100 µAVCC –0.4
V
VID
Identification voltage
11.5
12.5
V
IID
Identification current
A9 = VID
100
µ
A
VLKO
Program/Erase Lockout supply
voltage
1.8
2.3
V
AI02907
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A17/
A–1
G
DQ0-DQ7/
DQ8-DQ15
E
tELQV
tEHQX
tGHQZ
VALID
tBHQV
tELBL/tELBH
tBLQZ
BYTE



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