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STA335BW 데이터시트(PDF) 11 Page - STMicroelectronics |
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STA335BW 데이터시트(HTML) 11 Page - STMicroelectronics |
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11 / 54 page ![]() STA335BW Electrical specifications 11/54 3 Electrical specifications 3.1 Absolute maximum ratings 3.2 Recommended operating condition 3.3 Electrical characteristics power section Table 3. Absolute maximum ratings Symbol Parameter Min. Typ. Max. Unit Vcc Power supply voltage (VCCxA, VCCxB) 30 V Vdd Logic Input Interface -0.3 4 V Top Operating junction temperature -20 150 °C Tstg Storage temperature -40 150 °C Table 4. Recommended operating condition Symbol Parameter Min. Typ. Max. Unit Vcc Power supply voltage (VCCxA, VCCxB) 5.0 24.0 V Vdd Logic Input Interface 2.7 3.3 3.6 V Tamb Ambient temperature -20 70 °C Table 5. Electrical characteristics power section VCC = 18V, fsw = 384KHz, Tamb = 25°C, RL = 8Ω unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit RdsON Power Pchannel/Nchannel MOSFET RdsON ld = 1.5 A 180 250 m Ω Idss Power Pchannel/Nchannel leakage ldss VCC = 24 V 10 µA gP Power Pchannel RdsON Matching ld = 1.5 A 95 % gN Power Nchannel RdsON Matching ld = 1.5 A 95 % ILDT Low current Dead Time (static) Resistive load(1) 8 15 ns IHDT High current Dead Time (dynamic) @Iload = 2 A(2) 15 30 ns tr Rise time Resistive load(1) 10 18 ns tf Fall time Resistive load(1) 10 18 ns Vcc Supply voltage operating voltage 5 24 V |
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