Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

0

10

20

30

40

50

60

70

80

90

100

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

2E+0

IR(mA)

Tj=25 °C

Tj=125 °C

V (V)

R

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

1

2

5

1 0

20

50

100

100

200

500

1000

C(pF)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

V (V)

R

Figure 7. Forward voltage drop versus forward current (maximum values, per diode)

0.0

0.2

0.44

0.6

0.8

1.0

1.2

1.4

1.6

1.8

1

10

100

200

IFM(A)

Tj=25 °C

Tj=125 °C

V

(V)

FM

STPS30H100C

Characteristics (curves)

DS1560 - Rev 9

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