| 전자부품 데이터시트 검색엔진 |
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STPS30H100CW 데이터시트(PDF) 3 Page - STMicroelectronics |
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STPS30H100CW 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 5 µA Tj = 125 °C - 2 6 mA VF(2) Forward voltage drop Tj = 25 °C IF = 15 A - 0.80 V Tj = 125 °C - 0.64 0.67 Tj = 25 °C IF = 30 A - 0.93 Tj = 125 °C - 0.74 0.80 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.0086 IF2(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode STPS30H100C Characteristics DS1560 - Rev 9 page 3/12 |
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