1.2

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

0

10

12

14

16

18

20

0

2

4

6

8

10

12

14

2

4

6

8

PF(AV)(W)

T

=tp/T

tp

I

(A)

F(AV)

= 1

= 0.1

= 0.05

= 0.5

= 0.2

δ

δ

δ

δ

δ

δ

Figure 2. Average forward current versus ambient

temperature (δ= 0.5, per diode)

0

75

100

125

150

175

0

2

4

6

8

10

12

14

16

18

Rth(j-a) = 15 °C/W

25

50

I

(A)

F(AV)

Rth(j-a)=Rth(j-c)

T

(°C)

amb

T

=tp/T

tp

δ

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj= 125 °C)

P

(tp)

P

(10 µs)

ARM

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z

/ R

th(j-c)

th(j-c)

Single pulse

t (s)

p

STPS30H100C

Characteristics (curves)

DS1560 - Rev 9

page 4/12